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SIS434DN-T1-GE3
MOSFET,N CH,40V,35A,POWERPAK
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| Quantity | Price |
|---|---|
| 1+ | $1.940 |
| 10+ | $1.360 |
| 25+ | $1.270 |
| 50+ | $1.180 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.94
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS434DN-T1-GE3
Newark Part No.60AC3814
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0063ohm
Drain Source On State Resistance7600µohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Power Dissipation Pd3.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0063ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation Pd
3.8W
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
7600µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability