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Quantity | Price |
---|---|
1+ | $0.903 |
25+ | $0.744 |
100+ | $0.491 |
500+ | $0.412 |
1000+ | $0.331 |
2500+ | $0.317 |
10000+ | $0.306 |
25000+ | $0.301 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$4.52
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISA96DN-T1-GE3
Newark Part No.10AC9117
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
On Resistance Rds(on)0.0073ohm
Drain Source On State Resistance0.0088ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd26.5W
Power Dissipation26.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0073ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation Pd
26.5W
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.0088ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
26.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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