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SISH615ADN-T1-GE3
Power MOSFET, P Channel, 20 V, 35 A, 0.0044 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSISH615ADN-T1-GE3
Newark Part No.99AC9585
Product RangeTrenchFET Gen III Series
Technical Datasheet
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| 25+ | $0.123 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISH615ADN-T1-GE3
Newark Part No.99AC9585
Product RangeTrenchFET Gen III Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0044ohm
On Resistance Rds(on)0.0035ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd52W
Gate Source Threshold Voltage Max1.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III Series
Qualification-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0044ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen III Series
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
35A
On Resistance Rds(on)
0.0035ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
52W
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
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