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SISS32LDN-T1-GE3
MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS32LDN-T1-GE3
Newark Part No.42AH1978
Product RangeTrenchFET Gen IV
Technical Datasheet
36,429 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.480 |
| 10+ | $1.800 |
| 25+ | $1.640 |
| 50+ | $1.490 |
| 100+ | $1.330 |
| 250+ | $1.230 |
| 500+ | $1.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.48
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS32LDN-T1-GE3
Newark Part No.42AH1978
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id63A
On Resistance Rds(on)0.0058ohm
Drain Source On State Resistance7200µohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Power Dissipation Pd65.7W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0058ohm
Transistor Case Style
PowerPAK 1212-8S
Power Dissipation Pd
65.7W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
63A
Drain Source On State Resistance
7200µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability