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SISS32LDN-T1-GE3
MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSISS32LDN-T1-GE3
Newark Part No.42AH1978
Product RangeTrenchFET Gen IV
Technical Datasheet
37,301 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.620 |
| 10+ | $1.910 |
| 25+ | $1.740 |
| 50+ | $1.570 |
| 100+ | $1.410 |
| 250+ | $1.310 |
| 500+ | $1.200 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$2.62
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS32LDN-T1-GE3
Newark Part No.42AH1978
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id63A
Drain Source On State Resistance0.0058ohm
On Resistance Rds(on)0.0058ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Power Dissipation Pd65.7W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0058ohm
Transistor Case Style
PowerPAK 1212-8S
Power Dissipation Pd
65.7W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
63A
On Resistance Rds(on)
0.0058ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability