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| Quantity | Price |
|---|---|
| 1+ | $1.850 |
| 10+ | $1.350 |
| 25+ | $1.260 |
| 50+ | $1.180 |
| 100+ | $1.100 |
| 250+ | $1.020 |
| 500+ | $0.948 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.85
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS94DN-T1-GE3
Newark Part No.64AH1460
Product RangeTrenchFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id19.5A
Drain Source On State Resistance0.075ohm
On Resistance Rds(on)0.061ohm
Transistor Case StylePowerPAK 1212-S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation65.8W
Power Dissipation Pd65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.075ohm
Transistor Case Style
PowerPAK 1212-S
Rds(on) Test Voltage
10V
Power Dissipation
65.8W
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19.5A
On Resistance Rds(on)
0.061ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
65.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability