Print Page
VS-3C04ET07S2L-M3
Silicon Carbide Schottky Diode, Single, 650 V, 4 A, 12 nC, TO-263AB (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoVS-3C04ET07S2L-M3Copy
Manufacturer Standard Lead Time12 weeks
Newark Part No.
Re-Reel11AM8555RL
Cut Tape11AM8555
Your Part Number
26 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $5.060 | $25.30 |
| Total Price | $25.30 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $5.060 |
| 50+ | $3.320 |
| 100+ | $2.340 |
| 250+ | $2.090 |
| 500+ | $1.830 |
| 1000+ | $1.780 |
| 2500+ | $1.750 |
| 5000+ | $1.700 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-3C04ET07S2L-M3Copy
Manufacturer Standard Lead Time12 weeks
Newark Part No.
Re-Reel11AM8555RL
Cut Tape11AM8555
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current4A
Total Capacitive Charge12nC
Diode Case StyleTO-263AB (D2PAK)
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
VS-3C04ET07S2L-M3 is a 650V, 4A Gen 3 power SiC merged PIN Schottky diode. This wide band gap SiC based 650V Schottky diode, designed for high performance and ruggedness. It is an optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behavior
- 175°C maximum operating junction temperature
- MPS structure for high ruggedness to forward current surge events
- Meets JESD 201 class 1A whisker test
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
12nC
No. of Pins
2 Pin
Diode Mounting
Surface Mount
SVHC
Lead (04-Feb-2026)
Diode Configuration
Single
Average Forward Current
4A
Diode Case Style
TO-263AB (D2PAK)
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate