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DMN10H220LK3-13
MOSFET, N-CH, 100V, 7.5A, TO-252
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H220LK3-13Copy
Newark Part No.28AK8465
Your Part Number
1,882 In Stock
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| Quantity | Price |
|---|---|
| 5+ | $1.020 |
| 10+ | $0.629 |
| 25+ | $0.555 |
| 50+ | $0.479 |
| 100+ | $0.404 |
| 250+ | $0.356 |
| 500+ | $0.308 |
| 1000+ | $0.277 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.10
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN10H220LK3-13Copy
Newark Part No.28AK8465
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.179ohm
On Resistance Rds(on)0.179ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation18.7W
Power Dissipation Pd18.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.179ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
18.7W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Continuous Drain Current Id
7.5A
On Resistance Rds(on)
0.179ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
18.7W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate