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Dual MOSFETs :
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Fabricant
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Drain Source On State Resistance N Channel
=4200µohm
1
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Channel Type
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Drain Source Voltage Vds N Channel
(2)
Drain Source Voltage Vds
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Continuous Drain Current Id
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Drain Source Voltage Vds P Channel
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Continuous Drain Current Id N Channel
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Continuous Drain Current Id P Channel
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Drain Source On State Resistance P Channel
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Transistor Case Style
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Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source Voltage Vds P Channel | Continuous Drain Current Id N Channel | Continuous Drain Current Id P Channel | Drain Source On State Resistance N Channel | Drain Source On State Resistance P Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Power Dissipation P Channel | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
55X3089 RoHS | Each (Supplied on Cut Tape) Bandes découpées | 1+1,410 $ 25+1,000 $ 50+0,880 $ 100+0,761 $ 250+0,719 $ | N Channel | 30V | 30V | 40A | 30V | 40A | 40A | 4200µohm | 4200µohm | PowerPAIR | 8Pins | 31W | 31W | 150°C | - | |||||
Each (Supplied on Cut Tape) Bandes découpées | 1+3,740 $ 10+2,530 $ 25+2,300 $ 50+2,080 $ | N Channel | 30V | 30V | 60A | 30V | 60A | 60A | 4200µohm | 4200µohm | PowerPAK 1212 | 8Pins | 69.4W | 69.4W | 150°C | TrenchFET Gen IV Series | ||||||
