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Dual MOSFETs :
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Fabricant
(2)
Power Dissipation N Channel
=1.09W
1
(1)
(5)
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(5)
(20)
(1)
(1)
Channel Type
(2)
Drain Source Voltage Vds N Channel
(2)
Drain Source Voltage Vds
(2)
Continuous Drain Current Id
(2)
Drain Source Voltage Vds P Channel
(2)
Continuous Drain Current Id N Channel
(2)
Continuous Drain Current Id P Channel
(2)
Drain Source On State Resistance N Channel
(2)
Transistor Case Style
(2)
Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source Voltage Vds P Channel | Continuous Drain Current Id N Channel | Continuous Drain Current Id P Channel | Drain Source On State Resistance N Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Power Dissipation P Channel | Operating Temperature Max | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 5+1,120 $ 10+0,716 $ 25+0,630 $ 50+0,544 $ 100+0,459 $ Plus de tarifs | N Channel | 60V | 60V | 630mA | 60V | 630mA | 630mA | 1.8ohm | TSOT-26 | 6Pins | 1.09W | 1.09W | 150°C | AEC-Q101 | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 5+1,190 $ 10+0,734 $ 25+0,648 $ 50+0,562 $ 100+0,474 $ Plus de tarifs | N Channel | 60V | 60V | 630mA | 60V | 630mA | 630mA | 1.8ohm | TSOT-26 | 6Pins | 1.09W | 1.09W | 150°C | - | ||||||
