Dual MOSFETs :
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Tout développer
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Power Dissipation N Channel
=5W
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Drain Source Voltage Vds N Channel
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Drain Source Voltage Vds
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Continuous Drain Current Id
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Drain Source Voltage Vds P Channel
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Continuous Drain Current Id N Channel
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Continuous Drain Current Id P Channel
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Drain Source On State Resistance N Channel
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Drain Source On State Resistance P Channel
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source Voltage Vds P Channel | Continuous Drain Current Id N Channel | Continuous Drain Current Id P Channel | Drain Source On State Resistance N Channel | Drain Source On State Resistance P Channel | Transistor Case Style | No. of Pins | Power Dissipation N Channel | Power Dissipation P Channel | Operating Temperature Max | Qualification | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+2,800 $ 50+2,440 $ 100+2,230 $ 250+2,060 $ 500+1,780 $ Plus de tarifs | P Channel | 60V | 60V | 8A | 60V | 8A | 8A | 0.04ohm | 0.04ohm | SOIC | 8Pins | 5W | 5W | 175°C | AEC-Q101 | TrenchFET Series | ||||||
86AK6408 RoHS | Each (Supplied on Full Reel) Bobine complète | 2500+1,440 $ 7500+1,390 $ 12500+1,290 $ | P Channel | 60V | - | - | 60V | 8A | 8A | 0.04ohm | 0.04ohm | SOIC | 8Pins | 5W | 5W | 175°C | AEC-Q101 | TrenchFET Series | |||||
Each (Supplied on Cut Tape) Bandes découpées | 1+3,050 $ 50+1,920 $ 100+1,180 $ 250+1,060 $ 500+0,934 $ Plus de tarifs | Dual P Channel | 60V | 60V | 8A | 60V | 8A | 8A | 0.0421ohm | 0.0421ohm | SOIC | 8Pins | 5W | 5W | 175°C | AEC-Q101 | TrenchFET Series | ||||||

