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Single MOSFETs :
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Power Dissipation Pd
=109W
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Channel Type
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Transistor Polarity
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Drain Source Voltage Vds
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Continuous Drain Current Id
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Drain Source On State Resistance
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On Resistance Rds(on)
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(3)
(1)
Rds(on) Test Voltage
(4)
Emballage
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(3)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Channel Type | Transistor Polarity | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | On Resistance Rds(on) | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Power Dissipation Pd | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+6,890 $ 50+5,000 $ 100+3,580 $ 250+3,540 $ 500+3,480 $ Plus de tarifs | N Channel | N Channel | 600V | 11A | 0.38ohm | 0.32ohm | TO-252 (DPAK) | Surface Mount | 10V | 109W | 4V | 109W | 3Pins | 150°C | FDmesh II | ||||||
NEXPERIA | Each (Supplied on Cut Tape) Bandes découpées | 1+5,790 $ 50+3,720 $ 100+2,540 $ 250+2,290 $ 500+2,020 $ Plus de tarifs | N Channel | N Channel | 30V | 100A | 1700µohm | 0.00129ohm | SOT-669 | Surface Mount | 10V | 109W | 1.7V | 109W | 4Pins | 150°C | - | |||||
Each (Supplied on Cut Tape) Bandes découpées | 1+5,310 $ 50+3,410 $ 100+2,340 $ 250+2,120 $ 500+1,890 $ Plus de tarifs | N Channel | - | 30V | 100A | 0.0015ohm | 0.0013ohm | SOT-669 | Surface Mount | 10V | 109W | 1.7V | 109W | 4Pins | 175°C | - | ||||||
Each | 1+7,310 $ 10+7,170 $ 25+7,010 $ 50+6,870 $ 100+6,730 $ Plus de tarifs | N Channel | N Channel | 600V | 11A | 0.32ohm | 0.32ohm | TO-220 | Through Hole | 10V | 109W | 4V | 109W | 3Pins | 150°C | FDmesh II | ||||||
