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SEMIX352GB128DS
IGBT Module, Dual, 377 A, 2.35 V, 150 °C, SEMiX 2
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 27 semaine(s)
Informations produit
FabricantSEMIKRON
Réf. FabricantSEMIX352GB128DS
Code Commande16M0113
Fiche technique
IGBT ConfigurationDual
Transistor PolarityN Channel
DC Collector Current377A
Continuous Collector Current377A
Collector Emitter Saturation Voltage Vce(on)2.35V
Collector Emitter Saturation Voltage2.35V
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo1.15V
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleSEMiX 2
No. of Pins16Pins
IGBT TerminationStud
IGBT TechnologyTrench
Collector Emitter Voltage Max1.15V
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Spécifications techniques
IGBT Configuration
Dual
DC Collector Current
377A
Collector Emitter Saturation Voltage Vce(on)
2.35V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.15V
Operating Temperature Max
150°C
No. of Pins
16Pins
IGBT Technology
Trench
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
377A
Collector Emitter Saturation Voltage
2.35V
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Transistor Case Style
SEMiX 2
IGBT Termination
Stud
Collector Emitter Voltage Max
1.15V
Product Range
-
Documents techniques (2)
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (15-Jun-2015)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit