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0.56ohm Gallium Nitride (GaN) FETs :
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Drain Source On State Resistance
=0.56ohm
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Drain Source Voltage Vds
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Continuous Drain Current Id
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Typical Gate Charge
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Transistor Case Style
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Typical Gate Charge | Transistor Case Style | Transistor Mounting | No. of Pins | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Bandes découpées | 1+1,870 $ 10+1,600 $ 25+1,450 $ 50+1,310 $ 100+1,100 $ Plus de tarifs | 700V | 5A | 0.56ohm | 5.2nC | QFN | Surface Mount | 8Pins | SuperGaN Series | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+1,870 $ 10+1,600 $ 25+1,450 $ 50+1,310 $ 100+1,100 $ Plus de tarifs | 700V | 5A | 0.56ohm | 5.2nC | QFN | Surface Mount | 3Pins | SuperGaN Series | ||||||
