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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=8.6mohm
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MOSFET Module Configuration
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Transistor Polarity
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Continuous Drain Current Id
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Drain Source Voltage Vds
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On Resistance Rds(on)
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Rds(on) Test Voltage
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+85,040 $ 5+81,330 $ 10+77,640 $ 25+73,920 $ 50+70,160 $ Plus de tarifs | Single | N Channel | N Channel | 120A | 1.2kV | 0.0086ohm | 8.6mohm | TO-247 | 4Pins | 12V | 4.7V | 789W | 789W | 175°C | ||||||
Each | 1+42,390 $ 5+36,800 $ 10+31,210 $ 25+31,130 $ 50+31,040 $ Plus de tarifs | Single | - | N Channel | 106A | 750V | - | 8.6mohm | MO-299 | 8Pins | 12V | 5.5V | - | 600W | 175°C | ||||||
