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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
=2.63V
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(1)
MOSFET Module Configuration
(2)
Transistor Polarity
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Channel Type
(2)
Continuous Drain Current Id
(2)
Drain Source Voltage Vds
(2)
On Resistance Rds(on)
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Drain Source On State Resistance
(2)
Transistor Case Style
(2)
No. of Pins
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Emballage
(2)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+41,510 $ 5+38,190 $ 10+33,710 $ 25+29,230 $ 50+24,750 $ Plus de tarifs | Single | - | N Channel | 163A | 650V | - | 0.012ohm | TO-247 | 3Pins | 18V | 2.63V | - | 643W | 175°C | EliteSiC Series | ||||||
47AK6824 RoHS | Each | 1+44,730 $ 10+42,980 $ 25+41,050 $ 50+39,310 $ 100+34,090 $ Plus de tarifs | Single | N Channel | N Channel | 163A | 650V | 0.012ohm | 0.012ohm | TO-247 | 3Pins | 18V | 2.63V | 643W | 643W | 175°C | EliteSiC Series | |||||
