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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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Gate Source Threshold Voltage Max
=2.81V
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(5)
(1)
MOSFET Module Configuration
(4)
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Channel Type
(2)
(4)
Continuous Drain Current Id
(3)
(3)
Drain Source Voltage Vds
(6)
Drain Source On State Resistance
(3)
(1)
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Transistor Case Style
(6)
No. of Pins
(2)
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Rds(on) Test Voltage
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Power Dissipation
(3)
(3)
Emballage
(6)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+135,770 $ 5+127,650 $ 10+119,530 $ 25+111,410 $ 50+103,290 $ Plus de tarifs | FourPack | Four N Channel | 30A | 1.2kV | 0.042ohm | Module | 22Pins | 20V | 2.81V | 74W | 175°C | ||||||
Each | 1+113,460 $ 5+105,640 $ 10+97,820 $ 25+90,010 $ 50+82,180 $ Plus de tarifs | Half Bridge | Dual N Channel | 30A | 1.2kV | 42mohm | Module | 18Pins | 20V | 2.81V | 74W | 175°C | ||||||
32AK9490 RoHS | Each | 1+178,520 $ | Half Bridge | Dual N Channel | 51A | 1.2kV | 0.02ohm | Module | 18Pins | 20V | 2.81V | 119W | 175°C | |||||
Each | 1+228,530 $ 5+223,960 $ 10+219,390 $ 25+214,820 $ | FourPack | Four N Channel | 51A | 1.2kV | 0.02ohm | Module | 22Pins | 20V | 2.81V | 119W | 175°C | ||||||
Each | 1+195,160 $ 5+191,250 $ 10+187,350 $ 25+183,460 $ | FourPack | Four N Channel | 51A | 1.2kV | 0.02ohm | Module | 22Pins | 20V | 2.81V | 119W | 175°C | ||||||
Each | 1+113,250 $ 56+101,070 $ 84+99,050 $ 140+97,020 $ 280+95,000 $ Plus de tarifs | FourPack | Four N Channel | 30A | 1.2kV | 42mohm | Module | 22Pins | 20V | 2.81V | 74W | 175°C | ||||||
