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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
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Gate Source Threshold Voltage Max
=4.63V
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Transistor Case Style
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(1)
No. of Pins
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Rds(on) Test Voltage
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Power Dissipation
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Emballage
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(1)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+42,160 $ 5+35,920 $ 10+29,680 $ 25+29,080 $ 50+28,500 $ Plus de tarifs | Single | N Channel | 127A | 1.2kV | 0.014ohm | TO-247 | 4Pins | 18V | 4.63V | 686W | 175°C | EliteSiC Series | ||||||
65AK6016 RoHS | Each | 1+42,080 $ 5+41,270 $ 10+40,450 $ 25+40,050 $ 50+39,650 $ Plus de tarifs | Single | N Channel | 127A | 1.2kV | 0.014ohm | TO-247 | 4Pins | 18V | 4.63V | 686W | 175°C | EliteSiC Series | |||||
Each (Supplied on Cut Tape) Bandes découpées | 1+55,770 $ 50+43,340 $ 100+42,480 $ 250+41,600 $ 500+40,740 $ Plus de tarifs | Single | N Channel | 104A | 1.2kV | 0.014ohm | TO-263 (D2PAK) | 7Pins | 18V | 4.63V | 227W | 175°C | EliteSiC Series | ||||||
