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Silicon Carbide (SiC) MOSFETs & Modules :
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Fabricant
(3)
Power Dissipation Pd
=565W
1
(3)
(1)
(1)
(4)
(1)
(2)
(2)
(2)
MOSFET Module Configuration
(3)
Transistor Polarity
(3)
Channel Type
(3)
Continuous Drain Current Id
(3)
Drain Source Voltage Vds
(3)
On Resistance Rds(on)
(3)
Drain Source On State Resistance
(3)
Transistor Case Style
(1)
(1)
(1)
No. of Pins
(2)
(1)
Emballage
(3)
| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+50,820 $ 5+47,040 $ 10+43,250 $ 25+42,230 $ 50+41,290 $ Plus de tarifs | Single | N Channel | N Channel | 119A | 650V | 0.018ohm | 0.018ohm | TO-247 | 3Pins | 18V | 3.2V | 565W | 565W | 200°C | ||||||
Each | 1+55,480 $ 5+51,770 $ 10+48,070 $ 25+44,360 $ 50+40,650 $ Plus de tarifs | Single | N Channel | N Channel | 119A | 650V | 0.018ohm | 0.018ohm | HiP247 | 4Pins | 18V | 3.2V | 565W | 565W | 200°C | ||||||
Each | 1+54,220 $ 5+50,510 $ 10+46,820 $ 25+43,110 $ 50+39,410 $ Plus de tarifs | Single | N Channel | N Channel | 119A | 650V | 0.018ohm | 0.018ohm | HiP247LL | 3Pins | 18V | 3.2V | 565W | 565W | 200°C | ||||||
