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Silicon Carbide (SiC) MOSFETs & Modules :
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Transistor Case Style | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+1 708,140 $ 5+1 673,980 $ 10+1 639,820 $ 25+1 605,650 $ | Half Bridge | Dual N Channel | Dual N Channel | 400A | 1.2kV | Module | 5.6V | 1.57kW | 1.57kW | 150°C | ||||||
88AH6167 | Each | Prix non disponible. Veuillez contacter le service clientèle. | Chopper | N Channel | N Channel | 400A | 1.2kV | Module | 5.6V | 1.57kW | 1.57kW | 150°C | |||||
