Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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MOSFET Module Configuration
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Transistor Case Style
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
97AK4564 RoHS | Each | 1+11,400 $ 10+7,190 $ 25+6,800 $ 50+6,430 $ 100+6,050 $ Plus de tarifs | Single | - | N Channel | 38A | 650V | - | 0.046ohm | TO-247 | 3Pins | 20V | 5.6V | - | 153W | 175°C | CoolSiC Gen 2 Series | |||||
97AK4568 RoHS | Each | 1+14,000 $ 10+12,080 $ 25+10,150 $ 50+8,240 $ 100+7,610 $ Plus de tarifs | Single | - | N Channel | 38A | 650V | - | 0.046ohm | TO-247 | 4Pins | 20V | 5.6V | - | 153W | 175°C | CoolSiC Gen 2 Series | |||||
16AM7756 | Each (Supplied on Cut Tape) Bandes découpées | 600+8,560 $ 1000+8,390 $ | Single | - | N Channel | 35A | 1.2kV | - | 0.086ohm | TO-247 | 4Pins | 18V | 4.3V | - | 153W | 175°C | - | |||||
STMICROELECTRONICS | Each | 1+20,780 $ 10+19,740 $ 25+19,370 $ 50+18,020 $ 100+17,350 $ Plus de tarifs | Single | N Channel | N Channel | 20A | 1.2kV | 0.169ohm | 0.169ohm | TO-247 | 3Pins | 20V | 3.5V | 153W | 153W | 200°C | - | |||||



