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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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Emballage
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+31,740 $ 10+28,500 $ 25+25,260 $ 60+22,010 $ 120+20,950 $ Plus de tarifs | Single | N Channel | N Channel | 33A | 1.2kV | 0.075ohm | 0.075ohm | TO-247 | 3Pins | 18V | 3.2V | 290W | 290W | 200°C | - | ||||||
Each (Supplied on Cut Tape) Bandes découpées | 1+26,580 $ 10+19,120 $ 25+18,350 $ 50+17,620 $ 100+16,850 $ Plus de tarifs | Half Bridge | - | N Channel | 57A | 1.2kV | - | 0.04ohm | HDSOP | 16Pins | 18V | 5.1V | - | 290W | 175°C | CoolSiC Series | ||||||
04AM0268 RoHS | STMICROELECTRONICS | Each | 1+34,620 $ 5+30,830 $ 10+28,300 $ 25+27,640 $ 50+27,030 $ Plus de tarifs | Single | - | N Channel | 33A | 1.2kV | - | 0.105ohm | HiP247 | 4Pins | 18V | 5V | - | 290W | 200°C | - | ||||
