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Silicon Carbide (SiC) MOSFETs & Modules :
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Transistor Case Style | No. of Pins | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
11AN6077 RoHS | Each | 1+3 241,350 $ 5+3 176,530 $ 10+3 111,700 $ 25+3 046,880 $ | Half Bridge | Dual N Channel | 400A | 1.7kV | Module | 11Pins | 5.5V | 2kW | 150°C | |||||
11AN6075 RoHS | Each | 1+3 272,220 $ 5+3 206,770 $ 10+3 141,330 $ 25+3 075,880 $ | Half Bridge | Dual N Channel | 250A | 2.2kV | Module | 11Pins | 5.5V | 2kW | 150°C | |||||
11AN6078 RoHS | Each | 1+3 207,050 $ 5+3 142,920 $ 10+3 078,770 $ 25+3 014,630 $ | Half Bridge | Dual N Channel | 600A | 1.2kV | Module | 11Pins | 5.6V | 2kW | 150°C | |||||
