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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=328W
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MOSFET Module Configuration
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Continuous Drain Current Id
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Drain Source Voltage Vds
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Drain Source On State Resistance
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Comparer | Réf. fabricant | Code Commande | Fabricant / Description | Disponibilité | Prix pour | Prix | Quantité | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+199,770 $ 5+190,720 $ 10+181,680 $ 25+172,620 $ 50+163,580 $ Plus de tarifs | Half Bridge | Dual N Channel | 154A | 900V | 0.01003ohm | Module | 18Pins | 15V | 2.74V | 328W | 175°C | ||||||
Each | 1+166,630 $ 56+160,050 $ 84+156,840 $ 140+153,650 $ 280+150,440 $ Plus de tarifs | Half Bridge | Dual N Channel | 154A | 900V | 0.01003ohm | Module | 18Pins | 15V | 2.74V | 328W | 175°C | ||||||
