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G2R1000MT17J
Silicon Carbide MOSFET, Single, N Channel, 5 A, 1.7 kV, 1.45 ohm, TO-263 (D2PAK)
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FabricantGENESIC
Réf. FabricantG2R1000MT17JCopie
Code Commande89AH0973
Gamme de produitG2R Series
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| Quantité | Prix |
|---|---|
| 1000+ | 6,860 $ |
Prix pour :Each
Minimum: 1000
Multiple: 1000
6 860,00 $
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Informations produit
FabricantGENESIC
Réf. FabricantG2R1000MT17JCopie
Code Commande89AH0973
Gamme de produitG2R Series
Fiche technique
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id5A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance1.45ohm
On Resistance Rds(on)1ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Power Dissipation Pd54W
Gate Source Threshold Voltage Max5.5V
Power Dissipation44W
Operating Temperature Max175°C
Product RangeG2R Series
SVHCLead
Aperçu du produit
G2R1000MT17J is a N-Channel enhancement mode silicon carbide MOSFET. Application includes auxiliary power supply, solar inverters (string and central), infrastructure chargers, industrial motors (AC Servos), general purpose inverters, pulsed power, piezo drivers, and Ion beam generators.
- G2R™ technology, softer R v/s temperature dependency, LoRing™ electromagnetically optimized design
- Smaller R and lower QG, low device capacitances, industry-leading UIL and short-circuit robustness
- Robust body diode with low V and low QRR, optimized package with separate driver source pin
- Compatible with commercial gate drivers, low conduction losses at all temperature
- Reduced rining, faster and more efficient switching, lesser switching spikes and lower losses
- Better power density and system efficiency, ease of paralleling without thermal runway
- Superior robustness and system reliability
- Drain-source voltage is 1700V (V = 0V, I = 100µA), power dissipation is 44W (TC=-25°C)
- 1000Mohm drain-source on-state resistance (typ, VGS=20V, ID=2A), 3A ID (TC = 100°C)
- 7pin TO-263-7 package, operating and storage temperature range from -55 to 175°C
Spécifications techniques
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
On Resistance Rds(on)
1ohm
No. of Pins
7Pins
Power Dissipation Pd
54W
Power Dissipation
44W
Product Range
G2R Series
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
1.45ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
5.5V
Operating Temperature Max
175°C
SVHC
Lead
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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Certificat de conformité du produit