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MSC080SMA120B
Silicon Carbide MOSFET, Single, N Channel, 37 A, 1.2 kV, 0.08 ohm, TO-247
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FabricantMICROCHIP
Réf. FabricantMSC080SMA120BCopie
Délai d’approvisionnement standard du fabricant12 semaines
Code Commande29AK2560
Votre numéro de pièce
15 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 18,030 $ |
| 10+ | 17,670 $ |
| 25+ | 17,300 $ |
| 50+ | 16,940 $ |
| 100+ | 16,590 $ |
| 250+ | 16,230 $ |
| 500+ | 15,860 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
18,03 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantMICROCHIP
Réf. FabricantMSC080SMA120BCopie
Délai d’approvisionnement standard du fabricant12 semaines
Code Commande29AK2560
Fiche technique
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id37A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.8V
Power Dissipation200W
Power Dissipation Pd200W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (04-Feb-2026)
Aperçu du produit
MSC080SMA120B is a 1200V, 80mohm silicon carbide (SiC) power MOSFET in a 3-lead TO-247 package. It delivers high efficiency with low switching and conduction losses, fast switching speed, and robust avalanche performance. Designed for high-power and high-temperature applications, it is ideal for use in EV chargers, solar inverters, motor drives, and industrial power supplies.
- Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
- Supports high-frequency operation for smaller magnetics, higher power density, and lower cost
- Superior avalanche ruggedness and short-circuit withstand time
- HV-H3TRB proven capability ensures long-term reliability in high humidity environments
- Lower VGS and standard package enables improved compatibility with standard gate drivers
- Increased creepage distance (notch) improves safety and reliability in high-voltage designs
Spécifications techniques
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.8V
Power Dissipation Pd
200W
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
200W
Operating Temperature Max
175°C
SVHC
No SVHC (04-Feb-2026)
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (04-Feb-2026)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit