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CM400DU-5F
IGBT Module, Dual [Half Bridge], 400 A, 1.7 V, 890 W, 150 °C, Module
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FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM400DU-5F
Code Commande31C0203
Gamme de produitF Series
Fiche technique
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM400DU-5F
Code Commande31C0203
Gamme de produitF Series
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current400A
Continuous Collector Current400A
Collector Emitter Saturation Voltage1.7V
Collector Emitter Saturation Voltage Vce(on)250V
Power Dissipation Pd890W
Power Dissipation890W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo250V
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max250V
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
400A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
400A
Collector Emitter Saturation Voltage Vce(on)
250V
Power Dissipation
890W
Collector Emitter Voltage V(br)ceo
250V
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
250V
Product Range
F Series
Documents techniques (1)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:Non
SVHC :To Be Advised
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