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STB7NK80ZT4
Power MOSFET, N Channel, 800 V, 2.6 A, 1.5 ohm, TO-263 (D2PAK), Surface Mount
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| Quantité | Prix |
|---|---|
| 1+ | 5,360 $ |
| 10+ | 3,690 $ |
| 25+ | 3,380 $ |
| 50+ | 3,090 $ |
| 100+ | 2,800 $ |
| 250+ | 2,440 $ |
| 500+ | 2,060 $ |
| 1000+ | 1,920 $ |
Prix pour :Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
5,36 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantSTMICROELECTRONICS
Réf. FabricantSTB7NK80ZT4Copie
Code Commande33R1130
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2.6A
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
The STB7NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
1.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.5ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit