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WG40N120MFW1Q
IGBT, 80 A, 1.68 V, 750 W, 1.2 kV, TO-247, 3 Pins
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantWEEN SEMICONDUCTORS
Réf. FabricantWG40N120MFW1QCopie
Délai d’approvisionnement standard du fabricant26 semaines
Code Commande27AM4927
Votre numéro de pièce
950 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 7,440 $ |
| 10+ | 6,600 $ |
| 25+ | 5,940 $ |
| 50+ | 5,640 $ |
| 100+ | 5,040 $ |
| 250+ | 4,430 $ |
| 500+ | 4,330 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
7,44 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantWEEN SEMICONDUCTORS
Réf. FabricantWG40N120MFW1QCopie
Délai d’approvisionnement standard du fabricant26 semaines
Code Commande27AM4927
Fiche technique
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.68V
Power Dissipation750W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCTo Be Advised
Aperçu du produit
WG40N120MFW1Q is an IGBT. It uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode. This device is part of the medium speed series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter. Typical applications include solar inverter, UPS, welding converters, PFC and mid to high switching frequency applications.
- Medium switching speed, EMI improved design
- Positive temperature efficient for easy parallel operating
- Very soft, fast recovery anti-parallel diode
- Collector-emitter breakdown voltage is 1200V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 2.3V typ at VGE = 0V; IF = 40A; Tj = 25°C
- Zero gate voltage collector current is 250μA max at VCE = 1200V; VGE = 0V; Tj = 25°C
- Gate charge is 200nC typ at VCC = 960V; IC = 40A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 254nS typ at Tj = 25°C;VCC = 600V; IC = 40A; VGE = 15V / 0V;RG = 10 ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Spécifications techniques
Continuous Collector Current
80A
Power Dissipation
750W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.68V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
To Be Advised
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit