Print Page
BSC252N10NSFGATMA1
Power MOSFET, N Channel, 100 V, 40 A, 0.0252 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC252N10NSFGATMA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.60R2521
Also Known AsBSC252N10NSF G, SP000379608
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.200 |
| 10+ | $1.560 |
| 100+ | $1.390 |
| 500+ | $1.110 |
| 1000+ | $1.050 |
| 2500+ | $0.992 |
| 10000+ | $0.935 |
Price for:Each
Minimum: 1
Multiple: 1
$3.20
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC252N10NSFGATMA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.60R2521
Also Known AsBSC252N10NSF G, SP000379608
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id40A
Drain Source On State Resistance0.0252ohm
On Resistance Rds(on)0.0195ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Power Dissipation Pd78W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation78W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC252N10NSF G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Halogen-free
- MSL1 rated 2
Applications
Power Management, Audio, Motor Drive & Control, Industrial, Automotive
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0252ohm
Transistor Case Style
PG-TDSON
Power Dissipation Pd
78W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.0195ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for BSC252N10NSFGATMA1
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate