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Quantity | Price |
---|---|
1+ | $0.334 |
10+ | $0.209 |
25+ | $0.173 |
50+ | $0.138 |
100+ | $0.102 |
250+ | $0.098 |
500+ | $0.092 |
1000+ | $0.081 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$1.67
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Product Information
ManufacturerINFINEON
Manufacturer Part NoISS55EP06LMXTSA1
Newark Part No.42AH1868
Product RangeOptiMOS
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id180mA
On Resistance Rds(on)4.344ohm
Drain Source On State Resistance5.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd400mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeOptiMOS
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
4.344ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
400mW
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
OptiMOS
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
180mA
Drain Source On State Resistance
5.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for ISS55EP06LMXTSA1
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability