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ManufacturerLITTELFUSE
Manufacturer Part NoIXFN230N20T
Newark Part No.03AH0733
Product RangeGigaMOS Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 31 week(s)
Quantity | Price |
---|---|
100+ | $34.480 |
Price for:Each
Minimum: 300
Multiple: 10
$10,344.00
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN230N20T
Newark Part No.03AH0733
Product RangeGigaMOS Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id220A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.0075ohm
On Resistance Rds(on)0.0075ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd1.09kW
Power Dissipation1.09kW
Operating Temperature Max175°C
Product RangeGigaMOS Series
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It Is suitable for use in synchronous rectification, DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, high speed power switching applications.
- GigaMOS™ power MOSFET
- miniBLOC with aluminium nitride isolation
- Isolation voltage 2500V
- High current handling capability
- Low RDS(on)
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
220A
Drain Source On State Resistance
0.0075ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.09kW
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.0075ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
1.09kW
Product Range
GigaMOS Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate