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IXFQ60N50P3
Power MOSFET, N Channel, 500 V, 60 A, 0.11 ohm, TO-3P, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFQ60N50P3Copy
Manufacturer Standard Lead Time53 weeks
Newark Part No.03AH0867
Product RangePolar3 HiPerFET Series
Your Part Number
20 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $17.960 |
| 10+ | $15.580 |
| 25+ | $13.190 |
| 50+ | $10.810 |
| 100+ | $10.020 |
| 250+ | $9.240 |
| 500+ | $9.060 |
Price for:Each
Minimum: 1
Multiple: 1
$17.96
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFQ60N50P3Copy
Manufacturer Standard Lead Time53 weeks
Newark Part No.03AH0867
Product RangePolar3 HiPerFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id60A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd1.04kW
Power Dissipation1.04kW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangePolar3 HiPerFET Series
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.11ohm
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.04kW
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation
1.04kW
Operating Temperature Max
150°C
Product Range
Polar3 HiPerFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability