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BD13916STU
Bipolar (BJT) Single Transistor, NPN, 80 V, 1.5 A, 1.25 W, TO-126, Through Hole
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD13916STU
Newark Part No.82C0701
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Continuous Collector Current1.5A
Power Dissipation1.25W
Power Dissipation Pd1.25W
DC Collector Current1.5A
Transistor Case StyleTO-126
Transistor MountingThrough Hole
DC Current Gain hFE100hFE
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BD13916STU is a 80V NPN Epitaxial Silicon Transistor for medium power linear and switching applications. It is complement to BD140 transistor. This product is general usage and suitable for many different applications.
- 80V Collector to base voltage (VCBO)
- 5V Emitter to base voltage (VEBO)
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation
1.25W
DC Collector Current
1.5A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Continuous Collector Current
1.5A
Power Dissipation Pd
1.25W
Transistor Case Style
TO-126
DC Current Gain hFE
100hFE
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for BD13916STU
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability