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FQU2N90TU-AM002
Power MOSFET, N Channel, 900 V, 1.7 A, 5.6 ohm, TO-251 (IPAK), Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQU2N90TU-AM002
Newark Part No.48AC1194
Product RangeQFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 101 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQU2N90TU-AM002
Newark Part No.48AC1194
Product RangeQFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id1.7A
On Resistance Rds(on)5.6ohm
Drain Source On State Resistance5.6ohm
Transistor Case StyleTO-251 (IPAK)
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation50W
Power Dissipation Pd50W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeQFET Series
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
5.6ohm
Transistor Case Style
TO-251 (IPAK)
Rds(on) Test Voltage
10V
Power Dissipation
50W
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Transistor Polarity
N Channel
Continuous Drain Current Id
1.7A
Drain Source On State Resistance
5.6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
50W
Operating Temperature Max
150°C
Product Range
QFET Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate