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NDS352AP
Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDS352APCopy
Manufacturer Standard Lead Time18 weeks
Newark Part No.29X6826
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.293 |
| 6000+ | $0.275 |
| 9000+ | $0.240 |
| 15000+ | $0.214 |
| 30000+ | $0.197 |
| 75000+ | $0.180 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$879.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS352APCopy
Manufacturer Standard Lead Time18 weeks
Newark Part No.29X6826
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id900mA
On Resistance Rds(on)0.25ohm
Drain Source On State Resistance0.3ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd500mW
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1.7V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (14-Jun-2023)
Product Overview
The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.25ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
900mA
Drain Source On State Resistance
0.3ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (14-Jun-2023)
Technical Docs (3)
Alternatives for NDS352AP
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate