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| Quantity | Price |
|---|---|
| 1+ | $0.835 |
| 10+ | $0.591 |
| 25+ | $0.543 |
| 50+ | $0.496 |
| 100+ | $0.447 |
| 250+ | $0.401 |
| 500+ | $0.354 |
| 1000+ | $0.331 |
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Multiple: 1
$0.84
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS4C09NT1G
Newark Part No.51Y5000
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id52A
On Resistance Rds(on)0.0046ohm
Drain Source On State Resistance5800µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Power Dissipation Pd25.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation25.5W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0046ohm
Transistor Case Style
DFN
Power Dissipation Pd
25.5W
Gate Source Threshold Voltage Max
2.1V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
52A
Drain Source On State Resistance
5800µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
25.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability