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NTP082N65S3F
MOSFET, N-CH, 650V, 40A, TO-220
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTP082N65S3FCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.37AC0870
Product RangeSuperFET III FRFET
Your Part Number
9 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $14.750 |
| 10+ | $12.540 |
| 25+ | $10.330 |
| 50+ | $8.110 |
| 100+ | $7.480 |
| 250+ | $7.040 |
| 500+ | $6.610 |
Price for:Each
Minimum: 1
Multiple: 1
$14.75
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTP082N65S3FCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.37AC0870
Product RangeSuperFET III FRFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id40A
On Resistance Rds(on)0.07ohm
Drain Source On State Resistance0.082ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation313W
Power Dissipation Pd313W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET III FRFET
Qualification-
SVHCLead (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.07ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
313W
No. of Pins
3Pins
Product Range
SuperFET III FRFET
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.082ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
313W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Alternatives for NTP082N65S3F
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate