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NTR1P02LT3G
Power MOSFET, P Channel, 20 V, 1.3 A, 0.22 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 6000+ | $0.124 |
| 12000+ | $0.107 |
| 18000+ | $0.100 |
| 30000+ | $0.089 |
Price for:Each (Supplied on Full Reel)
Minimum: 10000
Multiple: 10000
$1,240.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR1P02LT3G
Newark Part No.05R9179
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1.3A
Drain Source On State Resistance0.22ohm
On Resistance Rds(on)0.14ohm
Transistor MountingSurface Mount
Power Dissipation Pd400mW
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max1V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
NTR1P02LT3G is a P Channel, -20V, -1.3A, 0.14ohm, power MOSFET. This miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are DC-DC converters and power management in portable and battery powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
- Low RDS(on) provides higher efficiency and extends battery life
- Drain to source breakdown voltage is -20V min
- Zero gate voltage drain current is -1µA at (VDS = -16V, VGS = 0V)
- Gate threshold voltage is -1.25V
- 225pF input capacitance at VDS = -5V
- 7/18ns turn-on/off delay time, 15/9ns rise/fall time (VGS=-4.5V, VDD=-5V, ID=-1A, RL=5ohm, RG=6ohm)
- Thermal resistance junction to ambient (RJA) is 300°C/W
- 400mW total power dissipation at TA = 25°C
- 3-pin SOT-23 package saves board space
- Operating and storage temperature (TJ, Tstg) range from - 55 to 150°C
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.22ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
1.3A
On Resistance Rds(on)
0.14ohm
Power Dissipation Pd
400mW
Transistor Case Style
SOT-23
Power Dissipation
400mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate