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NVF2955T1G
Power MOSFET, P Channel, -60 V, -2.6 A, 0.145 ohm, SOT-223, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.570 |
| 10+ | $1.150 |
| 25+ | $1.080 |
| 50+ | $0.996 |
| 100+ | $0.918 |
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$1.57
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVF2955T1G
Newark Part No.02AC3819
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds-60V
Continuous Drain Current Id-2.6A
Drain Source On State Resistance0.145ohm
On Resistance Rds(on)0.145ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd2.3W
Rds(on) Test Voltage-10V
Gate Source Threshold Voltage Max-4V
Power Dissipation2.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
-60V
Drain Source On State Resistance
0.145ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
2.3W
Gate Source Threshold Voltage Max
-4V
No. of Pins
4Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
-2.6A
On Resistance Rds(on)
0.145ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
-10V
Power Dissipation
2.3W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability