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STY100NM60N
Power MOSFET, N Channel, 600 V, 98 A, 0.028 ohm, MAX-247, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTY100NM60N
Newark Part No.45AC7797
Product RangeMDmesh II
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 1+ | $31.500 |
Price for:Each
Minimum: 1
Multiple: 1
$31.50
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTY100NM60N
Newark Part No.45AC7797
Product RangeMDmesh II
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id98A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.028ohm
Transistor Case StyleMAX-247
Transistor MountingThrough Hole
Power Dissipation Pd625W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation625W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh II
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.028ohm
Transistor Case Style
MAX-247
Power Dissipation Pd
625W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh II
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
98A
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
625W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate