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Quantity | Price |
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1+ | $1.290 |
10+ | $1.010 |
25+ | $0.955 |
50+ | $0.912 |
100+ | $0.882 |
500+ | $0.855 |
1000+ | $0.854 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF620PBF
Newark Part No.63J7330
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5.2A
Drain Source On State Resistance0.8ohm
On Resistance Rds(on)0.8ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd50W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max2V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRF620PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contribute to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management, Commercial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
50W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
On Resistance Rds(on)
0.8ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
50W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability