Print Page
IRFBE20PBF
Power MOSFET, N Channel, 800 V, 1.8 A, 6.5 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoIRFBE20PBFCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.63J6693
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 54 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.810 |
| 2000+ | $1.770 |
| 3000+ | $1.740 |
| 5000+ | $1.700 |
| 10000+ | $1.670 |
| 25000+ | $1.630 |
| 50000+ | $1.580 |
Price for:Each
Minimum: 1000
Multiple: 1000
$1,810.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBE20PBFCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.63J6693
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id1.8A
Drain Source On State Resistance6.5ohm
On Resistance Rds(on)6.5ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd54W
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation54W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
6.5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
54W
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
1.8A
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
Power Dissipation
54W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate