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SI1062X-T1-GE3
Power MOSFET, N Channel, 20 V, 530 mA, 0.42 ohm, SC-89, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI1062X-T1-GE3Copy
Newark Part No.
Re-Reel70AC6486
Cut Tape70AC6486
Your Part Number
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1062X-T1-GE3Copy
Newark Part No.
Re-Reel70AC6486
Cut Tape70AC6486
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id530mA
On Resistance Rds(on)0.35ohm
Drain Source On State Resistance0.42ohm
Transistor MountingSurface Mount
Power Dissipation Pd220mW
Rds(on) Test Voltage4.5V
Transistor Case StyleSC-89
Gate Source Threshold Voltage Max1V
Power Dissipation220mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.35ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
530mA
Drain Source On State Resistance
0.42ohm
Power Dissipation Pd
220mW
Transistor Case Style
SC-89
Power Dissipation
220mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate