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SI1441EDH-T1-GE3
Power MOSFET, P Channel, 20 V, 4 A, 0.041 ohm, SOT-363, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.299 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$897.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1441EDH-T1-GE3
Newark Part No.04X9746
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
On Resistance Rds(on)0.034ohm
Drain Source On State Resistance0.041ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.8W
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOT-363
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.034ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.8W
Transistor Case Style
SOT-363
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
0.041ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
Power Dissipation
2.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate