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SI2301CDS-T1-E3
Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-E3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel33P5163
Re-Reel69W7185RL
Cut Tape69W7185
Your Part Number
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| Cut Tape | 1 | $0.988 | $0.99 |
| Total Price | $0.99 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.988 |
| 50+ | $0.615 |
| 100+ | $0.395 |
| 250+ | $0.348 |
| 500+ | $0.301 |
| 1000+ | $0.270 |
| 2500+ | $0.258 |
| 5000+ | $0.246 |
Full Reel
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| 9000+ | $0.249 |
| 15000+ | $0.231 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-E3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel33P5163
Re-Reel69W7185RL
Cut Tape69W7185
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.112ohm
On Resistance Rds(on)0.11ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOT-23
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (04-Feb-2026)
Product Overview
Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch.
- TrenchFET® Power MOSFET
- Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to 1V (VDS = VGS, ID = - 250µA, TJ = 25°C)
- Continuous drain current is - 3.1A (TJ = 150 °C, TC = 25°C)
- Pulsed drain current is -10A (TA = 25°C)
- Continuous source-drain diode current is -1.3A (TC = 25°C, TA = 25°C)
- Maximum power dissipation is 1.6W (TC = 25°C, TA = 25°C)
- VDS temperature coefficient is -18mV/°C typ (ID = - 250µA, TJ = 25°C)
- Forward transconductance is 9.5S typ (VDS = - 5V, ID = - 2.8A, TJ = 25°C)
- SOT-23 package, operating junction temperature range from -55 to 150°C
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.112ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
2.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Channel Type
P Channel
Continuous Drain Current Id
3.1A
On Resistance Rds(on)
0.11ohm
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
400mV
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
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Product Compliance Certificate