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SI2329DS-T1-GE3
Power MOSFET, P Channel, 8 V, 6 A, 30 mohm, TO-236, Surface Mount
29,198 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.420 |
| 10+ | $0.885 |
| 100+ | $0.575 |
| 500+ | $0.443 |
| 1000+ | $0.399 |
| 2500+ | $0.352 |
| 10000+ | $0.304 |
Price for:Each
Minimum: 1
Multiple: 1
$1.42
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2329DS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.63W4143
Product RangeE
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id6A
Drain Source On State Resistance30mohm
On Resistance Rds(on)0.025ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation Pd2.5W
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
- 8V, 6A P-channel TrenchFET® power MOSFET in 3 pin TO-236 package
- 100 % Rg tested
- Low on-resistance
- Suitable for load switch and low voltage gate drive
- Also used in battery management in portable equipment
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
30mohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation Pd
2.5W
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate