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Quantity | Price |
---|---|
1+ | $0.943 |
10+ | $0.652 |
25+ | $0.591 |
50+ | $0.529 |
100+ | $0.467 |
250+ | $0.427 |
500+ | $0.385 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.72
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2367DS-T1-GE3
Newark Part No.57AJ0431
Product RangeTrench
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.8A
On Resistance Rds(on)0.066ohm
Drain Source On State Resistance0.066ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation960mW
Power Dissipation Pd960mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrench
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.066ohm
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
960mW
No. of Pins
3Pins
Product Range
Trench
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.8A
Drain Source On State Resistance
0.066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI2367DS-T1-GE3
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability