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SI2387DS-T1-GE3
MOSFET, P-CH, 80V, 3A, 150DEG C, 2.5W ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSI2387DS-T1-GE3
Newark Part No.50AJ6065
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.859 |
| 10+ | $0.581 |
| 25+ | $0.508 |
| 50+ | $0.434 |
| 100+ | $0.360 |
| 250+ | $0.335 |
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Multiple: 5
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2387DS-T1-GE3
Newark Part No.50AJ6065
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id3A
Drain Source On State Resistance0.164ohm
On Resistance Rds(on)0.137ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
Power Dissipation Pd2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.164ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
No. of Pins
3Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3A
On Resistance Rds(on)
0.137ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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