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SI4056DY-T1-GE3
Power MOSFET, N Channel, 100 V, 11.1 A, 23 mohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4056DY-T1-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Re-Reel19X1959RL
Cut Tape19X1959
Your Part Number
645 In Stock
256,648 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.610 | $2.61 |
| Total Price | $2.61 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.610 |
| 50+ | $1.340 |
| 100+ | $1.210 |
| 250+ | $1.100 |
| 500+ | $0.991 |
| 1000+ | $0.972 |
| 2500+ | $0.951 |
| 5000+ | $0.931 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4056DY-T1-GE3Copy
Manufacturer Standard Lead Time43 weeks
Newark Part No.
Re-Reel19X1959RL
Cut Tape19X1959
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id11.1A
Drain Source On State Resistance23mohm
On Resistance Rds(on)0.017ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd5.7W
Power Dissipation5.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
- N-channel 100 V (D-S) TrenchFET® power MOSFET
- 100 % Rg and UIS Tested
- Used in DC/DC primary side switch, telecom/server, industrial, synchronous rectification
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
23mohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
5.7W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
11.1A
On Resistance Rds(on)
0.017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
5.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate