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SI7431DP-T1-E3
Power MOSFET, P Channel, 200 V, 2.2 A, 0.174 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7431DP-T1-E3Copy
Manufacturer Standard Lead Time64 weeks
Newark Part No.
Re-Reel60AC3818RL
Cut Tape60AC3818
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $7.350 | $7.35 |
| Total Price | $7.35 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $7.350 |
| 50+ | $4.900 |
| 100+ | $3.490 |
| 250+ | $3.290 |
| 500+ | $3.090 |
| 1000+ | $2.970 |
| 2500+ | $2.830 |
| 5000+ | $2.690 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7431DP-T1-E3Copy
Manufacturer Standard Lead Time64 weeks
Newark Part No.
Re-Reel60AC3818RL
Cut Tape60AC3818
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.2A
On Resistance Rds(on)0.145ohm
Drain Source On State Resistance0.174ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.9W
Power Dissipation Pd1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
P-channel 200V (D-S) MOSFET for use in active clamp in intermediate, DC/DC power supplies.
- TrenchFET® power MOSFET
- Ultra-low on-resistance critical for application
- Low thermal resistance PowerPAK® package with Low 1.07mm profile
- 100% Rg and avalanche tested
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.145ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Drain Source On State Resistance
0.174ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate